Indium(III) arsenide — Chembox new Name = Indium(III) arsenide ImageFile = Indium(III) arsenide.jpg ImageName = Indium(III) arsenide OtherNames = indium arsenide, indium monoarsenide Section1 = Chembox Identifiers CASNo = 1303 11 3 Section2 = Chembox Properties Formula … Wikipedia
Indium(III) phosphide — Chembox new Name = Indium(III) phosphide ImageFile = Indium(III) phosphide.jpg ImageSize = 200px ImageName = Indium(III) phosphide IUPACName = Indium phosphide OtherNames = Indium(III) phosphide Name = Section1 = Chembox Identifiers CASNo = 22398 … Wikipedia
Gallium(III) arsenide — Chembox new Name = Gallium arsenide ImageFile = Gallium arsenide.jpg ImageFile1 = Gallium arsenide unit cell 3D balls.png IUPACName = Gallium arsenide Section1 = Chembox Identifiers CASNo = 1303 00 0 SMILES = Ga#As Section2 = Chembox Properties… … Wikipedia
Indium gallium phosphide — (InGaP) is a semiconductor composed of indium, gallium and phosphorus. It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium… … Wikipedia
Indium gallium nitride — (InGaN, IndiumxGallium1 xNitrogen) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its band gap can be tuned by varying the amount of… … Wikipedia
indžio(III) arsenidas — statusas T sritis chemija formulė InAs atitikmenys: angl. indium(III) arsenide rus. индия(III) арсенид … Chemijos terminų aiškinamasis žodynas
индия(III) арсенид — indžio(III) arsenidas statusas T sritis chemija formulė InAs atitikmenys: angl. indium(III) arsenide rus. индия(III) арсенид … Chemijos terminų aiškinamasis žodynas
III-V-Halbleiter — Gruppe 13 14 15 Periode Schale 2 … Deutsch Wikipedia
III/V-Halbleiter — Gruppe 13 14 15 Periode Schale 2 … Deutsch Wikipedia
Gallium arsenide — Gallium arsenide … Wikipedia